Engineering & Technologies, 2016, 9(8), 1279-1290 ~ ~ ~ УДК 004.7 The Accuracy of the Contact Method of Measuring the Current Area of the Crystals Grown by the Czochralski Method Sergey P. Sahansky* Siberian Federal University 79 Svobodny, Krasnoyarsk, 660041, Russia Received 10.06.2016, received in revised form 24.08.2016, accepted 27.10.2016 For crystals grown from a liquid melt using the Czochralski method, under the control of the current area of the crystal on the basis of the contact measurement method, defi nes the requirements for ensuring the accuracy of measuring the value of 1 %. <...> Citation: Sahansky S.P. The accuracy of the contact method of measuring the current area of the crystals grown by the czochralski method, J. Sib. <...> Introduction Microprocessor control system in growing germanium crystals, developed on the basis of patents [1, 2], have been implemented in a semiconductor production growing the germanium crystals (Fig. 1). © Siberian Federal University. <...> The Accuracy of the Contact Method of Measuring the Current Area of the Crystals Grown… Job management systems based on a contact method of measurement of the current space grown crystals is as follows: under control of the camera control system is made growing crystal diameter d, with velocities Vз cultivation and rotation Wз diameter D is rotated with an angular velocity in descending Wт crystal with molten metal in a crucible with an inner melt in the crucible. <...> The signal from the contact sensor is supplied through the smoothing fi lter C1, R1, R2 and coordination unit to a computer to make a decision about how to manage the rise of the crucible up, which is carried out by the control unit stepper motor. <...> In addition to the crucible lifting speed up the Vт of xт speed Vз in the system is the formation of information on the movement of the crucible Xитц ) and information about how to move Xизц growing crystal, crystal Wз crystal (in increments of xз rotation, crucible rotation Wт melt temperature is controlled based on the formation temperature Тз crystal rotation speed Wз T x T x Z A y dx , V x V x Z K yV ( ) ( ) (x), of the crucible Wт ( ) ( ) W x W x , ( ) ( ) where KV Wзп W x <...>