PROPERTIES OF GaAs/AlGaAs HETEROPHOTOTRANSFORMATORS WITH HOLOGRAPHIC CONCENTRATORS Abdukadirov Muhitdin Abdurashitovich, Dr. of sciences, Professor, Tashkent University of information Technologies Azamatov Zakir Tahirovich, Dr. of sciences, Professor, Tashkent State Technical University Axmedova Nodira Aminjanovna, Candidate of science, Tashkent University of information Technologies Ganiyev Abror Sattarovich, Candidate of science, Tashkent University of information Technologies, e-mail: abror1958@gmail.com Muminov Ramizulla Abdullaevich, Academician Uzbekistan Academy of sciences Physical-Technical Institute «Рhysics-San» Uzbekistan Academy of sciences Abstract: Studied photovoltaic processes in GaAs /AlGaAs heterostructure solar cell with a spectral sensitivity in the range of 450 ≤ λ≤ 850 nm under holographic concentrator illumination. <...> It is shown that with increasing of concentration of the solar flux to 10krat with a linear increase in short-circuit current and open circuit voltage efficiency reaches its maximum value. <...> Index terms: solar sell, semi conduction, gallium arsenide, spektrowave diapazon, short circuit current, open circuit voltage, hologhraphic concentrator. <...> Photovoltaic conversion of solar energy into electricity is currently receiving increased attention [1]. <...> However, the usage of holographic concentrators [2, 3] to create a photovoltaic system is a promising direction of solar energy, except as they are lightweight construction, does not require tracking of the sun system. <...> At the same time, the basic properties of the photoelectric heterophototransformators (HPhT), with holographic concentrating systems, hardly been studied up to these days [3]. <...> In this study, we investigated HPhT with heterostructure nGaAs/pGaAs /pAlxGa1-xAs (х=0,8), where the base layer рGaAs obtained by low-temperature diffusion of Zn from the gas phase prior to formation of the solid solution pAlxGa1-xAs by liquid phase epitaxy on nGaAs substrates. <...> Thickness of the heavily doped base layers, and were within 5…10 mcm и 3…5 mcm respectively. <...> The ohmic contacts are deposited by chemical vapor deposition of Ag stripe form on the surface of a solid solution pAlxGa1-xAs and solid form on the end face of the heterostructure, followed by thermal annealing at 675K. <...> On the front surface of HPhT marked as antireflection layers on the basis of SiO2. <...> Investigated HPhT had a total area of ~0,25 сm2. <...> The degree <...>