Engineering & Technologies 3 (2015 8) 297-303 ~ ~ ~ УДК 621.375.026, 621.375.4 The GAN Era has Arrived in SATCOM Power Amplifi ers Steve Turner* Teledyne Paradise Datacom LLC 328 Innovation Blvd., Sute 100, State College, PA 16803 USA Received 09.12.2014, received in revised form 26.01.2015, accepted 14.03.2015 In this paper features, characteristics and comparisons of gallium nitride high electron mobility transistors (GaNHEMTs) power amplifi ers are considered. <...> Maximum operating temperature widespread now, gallium arsenide GaAs transistors is 175o C. They are inferior to the transistors based on gallium nitride GaN, and keep steadily working frequency characteristics at operating temperatures up to 2500 C. This greatly reduces the problem of heat removal. <...> These transistors operate at voltages up to 100 V against the maximum of 20 V for GaAs transistors at equivalent power output. <...> Therefore, GaN transistors and power amplifi ers, they are particularly relevant for applications in space exploration. <...> In Paradise Datacom (USA) designed power amplifi ers in different ranges of frequencies with a power output of up to 50 to 750 watts. <...> Keywords: gallium nitride high electron mobility transistors, amplifi ers, power amplifi ers. <...> Тёрнер Teledyne Paradise Datacom LLC 328, Инновации бульвар, офис 100 Государственный колледж, PA 16803, США В статье описаны функции, характеристики транзисторов GaN с высокой подвижностью электронов в усилителях мощности. <...> The GAN Era has Arrived in SATCOM Power Amplifi ers них особенно актуальны для приложений в космической сфере. <...> Introduction Gallium Nitride High Electron Mobility Transistors, GaNHEMTs, are fast becoming the amplifi er designer’s device of choice for applications ranging from pulsed radar to communication systems. <...> This is primarily due to the high power density as compared to Gallium Arsenide, GaAs and high frequency capability as compared to LDMOS devices. <...> For an equivalent semiconductor die physical size a GaN device can produce two to three times more RF output power. <...> The key characteristics of GaN are <...>